ZnO is a good candidate material to be inserted as a tunneling insulator layer at the metal—semiconductor junction. A key consideration in many modern devices is the atomic structure of the hetero-interface, which often ultimately governs the electronic or chemical process of interest. Here, a complementary suite of in situ synchrotron X-ray techniques fluorescence, reflectivity and absorption as well as modeling is used to investigate both structural and chemical evolution during the initial growth of ZnO by atomic layer deposition ALD on In 0.
Prior to steady-state growth behavior, we discover a transient regime characterized by two stages.
Atomic layer deposition | Surface Science | Tampere Universities
This leads eventually to the formation of a 1 nm-thick, two-dimensional 2D amorphous layer. Second, the growth behavior and its modeling suggest the occurrence of dense island formation, with an aspect ratio and surface roughness that depends sensitively on the growth condition. The article was received on 24 Mar , accepted on 06 Jun and first published on 07 Jun If you are not the author of this article and you wish to reproduce material from it in a third party non-RSC publication you must formally request permission using Copyright Clearance Center.
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Atomic Layer Deposition for Flexible Electronics: from Functional Thin Films to Thin Film Devices
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About this book This edited volume discusses atomic layer deposition ALD for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines. Show all. Show next xx.